Accession Number : ADA297604
Title : Ohmic Contact to Ion Implanted Gallium Arsenide Antimonide for Application to Indium Aluminum Arsenide/Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors.
Descriptive Note : Doctoral thesis,
Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
Personal Author(s) : Merkel, Kenneth G., II
PDF Url : ADA297604
Report Date : JUL 1995
Pagination or Media Count : 304
Abstract : The p-channel In(0.52)Al(0.48)As/GaAs(1-x)Sb(x) heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In(0.52)Al(0.48)As/GaAs(1-x)Sb(x) p-HIGFET requires improved source/drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In(0.52)Al(0.48)As/GaAs(0.51)Sb(0.49) HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped GaAs(0.51)Sb(0.49). Third, high acceptor concentrations were obtained on GaAs(1-x)Sb(x) using beryllium ion implantation. Fourth, Au/Zn/Au and Ti/Pt/Au were compared as ohmic contact metallizations to these highly doped layers. Finally, In(0.52)Al(0.48)As/GaAs(0.51)Sb(0.49) HIGFETs were fabricated and characterized using Ti/Pt/Au metallization and Be implantation. An array of characterization methods were employed to thoroughly characterize materials and devices including: transmission line measurements (TLM), electrochemical profiling, photoluminescence (PL), atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), cross-sectional transmission electron microscopy (XTEM), selected area diffraction (SAD) and energy dispersive X-ray analysis (EDX). jg p.25
Descriptors : *GALLIUM ARSENIDES, *GATES(CIRCUITS), *FIELD EFFECT TRANSISTORS, *ION IMPLANTATION, *ALUMINUM, *INDIUM, *ANTIMONIDES, THERMAL PROPERTIES, IONS, SOURCES, MEASUREMENT, HIGH RATE, LAYERS, PHOTOLUMINESCENCE, ENERGY, X RAY DIFFRACTION, THESES, ELECTROCHEMISTRY, TRANSMISSION LINES, INTEGRATED CIRCUITS, MASS SPECTROSCOPY, IMPURITIES, ELECTRON MICROSCOPY, DRAINAGE, PROFILES, DIFFRACTION, LIMITATIONS, CROSS SECTIONS, CONCENTRATION(COMPOSITION), ZINC, PLATINUM, TITANIUM, DOPING, BERYLLIUM, ELECTRIC CURRENT, LEAKAGE(ELECTRICAL), GOLD, ELECTRON ACCEPTORS, AUGER ELECTRON SPECTROSCOPY, LOW RATE, ELECTRIC CONTACTS, DISPERSIONS, METALLIZING.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE