Accession Number : ADA298197
Title : Photo-Assisted Epitaxial Growth for III-V Semiconductors. Selective Area Epitaxy.
Descriptive Note : Final rept. 1 Sep 90-31 Oct 94,
Corporate Author : CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL AND COMPUTER ENGINEERIN G
Personal Author(s) : Tu, C. W. ; Dong, H. K.
PDF Url : ADA298197
Report Date : 03 MAR 1995
Pagination or Media Count : 193
Abstract : We have investigated laser-enhanced growth of GaAs by metal-organic molecular beam epitaxy (MOMBE) with triethylgallium (TEGa) and solid arsenic and by chemical beam epitaxy (CBE) with TEGa and a safer, alternative organometallic precursor, tris dimethylaminoarsenic (TDMAAs), to the highly toxic arsine. We discovered that with TDMAAs we can increase the laser-enhanced growth temperature window by 100 deg C, as compared to that with arsine or arsenic. CBE growth of InP and InGaP using tris- dimethylaminophosphorus (TDMAP) and tertiarybutylphosphine (TBP) is also reported. We discovered the etching effect of TDMAAs and TDMAP, and investigated laser-enhanced etching of GaAs by TDMAAs. We also investigated laser-enhanced carbon and silicon doping in GaAs with diiodomethane (CI2H2) and disilane, respectively. We can achieve a two-order-of-magnitude enhancement in p-type carbon doping with CI2H2 by laser irradiation. Finally, we report on lateral bandgap variation by laser-modified compositional change in InGaAs/GaAs multiple quantum wells grown by MOMBE and CBE. jg p.3
Descriptors : *EPITAXIAL GROWTH, *GROUP III COMPOUNDS, *GROUP IV COMPOUNDS, *GROUP V COMPOUNDS, *P TYPE SEMICONDUCTORS, CHEMICALS, PRECURSORS, TOXICITY, QUANTUM WELLS, GALLIUM ARSENIDES, ORGANOMETALLIC COMPOUNDS, SEMICONDUCTORS, CARBON, SOLIDS, LASERS, ETCHING, MOLECULAR BEAMS, SILICON, SILANES, IODINE, DOPING, METHANE, ARSINES, INDIUM PHOSPHIDES, ARSENIC.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE