Accession Number : ADA298322
Title : Complementary 2-D MESFET for Low Power Electronics. Phase 1.
Descriptive Note : Interim rept. no. 5.
Corporate Author : ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA
PDF Url : ADA298322
Report Date : 29 AUG 1995
Pagination or Media Count : 4
Abstract : As detailed in the Phase I proposal, the project has four major tasks. These are (1) assessment of the p-channel 2-D MESFET device fabrication, (2) development of a p-channel 2-D MESFET model and implementation of the model into AIM-SPICE, (3) circuit simulations of complementary 2-D MESFET circuits using AIM-SPICE and comparison with conventional circuits, and, (4) analysis of manufacturability and technology insertion issues. This report summarizes progress in each task area through 29 AUG 95.
Descriptors : *FIELD EFFECT TRANSISTORS, *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS, COMPUTERIZED SIMULATION, LOW POWER, ELECTRONIC EQUIPMENT, FABRICATION, POWER EQUIPMENT, CIRCUITS, P TYPE SEMICONDUCTORS.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE