Accession Number : ADA298591

Title :   Heteroepitaxial Diamond Growth.

Descriptive Note : Quarterly rept. no. 3, 1 Jul-30 Sep 94,

Corporate Author : RESEARCH TRIANGLE INST RESEARCH TRIANGLE PARK NC

Personal Author(s) : Markunas, R. J. ; Rudder, R. A. ; Posthill, J. B. ; Thomas, R. E. ; Hudson, G.

PDF Url : ADA298591

Report Date : SEP 1995

Pagination or Media Count : 65

Abstract : This is the 1994 third quarterly report on the Heteroepitaxial Diamond Growth Program Contract No. N-0004l-92-C-008 1. Work progressed in one major area this quarter: improvement of diamond homoepitaxy. The ability to do excellent, routine diamond homoepitaxy is in the critical path for any large-area single-crystal diamond technology. It is a cornerstone of our efforts to produce a large-area single-crystal diamond substrate via a tiled array. This progress in CVD growth of homoepitaxial diamond is described herein. Additionally, we have summarized our tiled array (epitaxial joining) work by publishing two papers in the open literature. Another manuscript was submitted for publication that gives our current interpretation on the role of hydrogen on the negative electron affinity (NEA) diamond surface. These manuscripts are included in this report. jg p.4

Descriptors :   *DIAMONDS, *EPITAXIAL GROWTH, SINGLE CRYSTALS, HYDROGEN, SURFACES, JOINING, CRITICAL PATH METHODS.

Subject Categories : Inorganic Chemistry
      Laminates and Composite Materials
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE