Accession Number : ADA298593

Title :   Heteroepitaxial Diamond Growth.

Descriptive Note : Quarterly rept. no. 4, 1 Oct-31 Dec 94,

Corporate Author : RESEARCH TRIANGLE INST RESEARCH TRIANGLE PARK NC

Personal Author(s) : Markunas, R. J. ; Rudder, R. A. ; Posthill, J. B. ; Thomas, R. E. ; Hudson, G.

PDF Url : ADA298593

Report Date : SEP 1995

Pagination or Media Count : 37

Abstract : The combination of several processes, including 600 deg C homoepitaxial diamond growth with water/alcohol mixtures, has enabled the lift-off of a synthetic single-crystal C(100) plate of dimensions 2.0 mm x 0.5 mmx 17.5 micrometers. The essence of this lift-off (or cutting) technique involves forming a buried damaged layer in a diamond single-crystal substrate while still maintaining the crystalline surface suitable for homoepitaxy. After completion of epitaxy, the damaged region is graphitized and exposed to an etching environment from the edges, thereby enabling the synthetic crystal to lift-off. jg p.2

Descriptors :   *DIAMONDS, *EPITAXIAL GROWTH, ENVIRONMENTS, WATER, SINGLE CRYSTALS, SUBSTRATES, CRYSTALS, ETCHING, MIXTURES, SURFACES, TAKEOFF, ALCOHOLS.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE