Accession Number : ADA298593
Title : Heteroepitaxial Diamond Growth.
Descriptive Note : Quarterly rept. no. 4, 1 Oct-31 Dec 94,
Corporate Author : RESEARCH TRIANGLE INST RESEARCH TRIANGLE PARK NC
Personal Author(s) : Markunas, R. J. ; Rudder, R. A. ; Posthill, J. B. ; Thomas, R. E. ; Hudson, G.
PDF Url : ADA298593
Report Date : SEP 1995
Pagination or Media Count : 37
Abstract : The combination of several processes, including 600 deg C homoepitaxial diamond growth with water/alcohol mixtures, has enabled the lift-off of a synthetic single-crystal C(100) plate of dimensions 2.0 mm x 0.5 mmx 17.5 micrometers. The essence of this lift-off (or cutting) technique involves forming a buried damaged layer in a diamond single-crystal substrate while still maintaining the crystalline surface suitable for homoepitaxy. After completion of epitaxy, the damaged region is graphitized and exposed to an etching environment from the edges, thereby enabling the synthetic crystal to lift-off. jg p.2
Descriptors : *DIAMONDS, *EPITAXIAL GROWTH, ENVIRONMENTS, WATER, SINGLE CRYSTALS, SUBSTRATES, CRYSTALS, ETCHING, MIXTURES, SURFACES, TAKEOFF, ALCOHOLS.
Subject Categories : Inorganic Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE