Accession Number : ADA298756

Title :   A Research Report on Vertical-Cavity Surface-Emitting Lasers.

Descriptive Note : Final technical rept. Mar 93-Aug 94,

Corporate Author : VIRGINIA UNIV CHARLOTTESVILLE

Personal Author(s) : Towe, Elias

PDF Url : ADA298756

Report Date : MAY 1995

Pagination or Media Count : 43

Abstract : The major accomplishments of this work were: (1) the growth, fabrication and testing of vertical cavity surface emitting lasers on (001) GaAs substrates - the device structures were grown by the technique of molecular beam epitaxy; (2) the study of the polarization characteristics of these devices and (3) the demonstration that there is no intrinsic polarization selection mechanism in surface emitting lasers grown on (001) GaAs substrates. Because of the importance of the need for polarization stability of these devices for certain applications, a preliminary study to find techniques to control the polarization was carried out. During this work, it was demonstrated that it is possible to control the polarization of these devices when the substrate orientation is changed to the (110) direction This preliminary study will be pursued in the next phase of our work.

Descriptors :   *GALLIUM ARSENIDE LASERS, EMISSION, POLARIZATION, STABILITY, QUANTUM WELLS, ORIENTATION(DIRECTION), EPITAXIAL GROWTH, SUBSTRATES, MOLECULAR BEAMS, SURFACES, QUANTUM EFFICIENCY.

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE