Accession Number : ADA298911

Title :   Diagnostics and Modeling of Laser-Assisted MOCVD Growth of Thin Films.

Descriptive Note : Final rept. Oct 89-Dec 93,

Corporate Author : RICE UNIV HOUSTON TX DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Wilson, W. L., Jr. ; Tittel, F. K. ; Halas, N. J.

PDF Url : ADA298911

Report Date : MAY 1994

Pagination or Media Count : 31

Abstract : The objective of this work has been to develop new optical techniques that can be used to study the laser assisted MOCVD growth of ZnSe thin films, and to characterize the high speed electronic properties of the epitaxial ZnSe material itself. Through the use of an ArF excimer laser at 193 nm, it is possible to photodissociate both precursors used for MOCVD growth of ZnSe, dimethylzinc (DMz) and diethylselenium (DES). This technique permits epitaxial growth at reduced substrate temperatures and with much better control. This in turn leads to significantly improved film quality. Through a better understanding of the growth process, as well as a more detailed knowledge of the electronic characteristics of the material which is produced, it will be possible to better optimize and control the fabrication of high quality ZnSe though laser assisted MOCVD techniques.

Descriptors :   *CHEMICAL VAPOR DEPOSITION, *EPITAXIAL GROWTH, LASER PUMPING, METHODOLOGY, PHOTODISSOCIATION, ELECTROMAGNETIC PROPERTIES, THIN FILMS, FABRICATION, ORGANOMETALLIC COMPOUNDS, SUBSTRATES, QUALITY, TEMPERATURE CONTROL, VACUUM ULTRAVIOLET RADIATION, ZINC SELENIDES.

Subject Categories : Radiation and Nuclear Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE