Accession Number : ADA298951

Title :   Ultra-High-Speed A/D Converter Based on Resonant-Tunneling Diodes.

Descriptive Note : Final technical rept.,

Corporate Author : ALLIED-SIGNAL AEROSPACE CO COLUMBIA MD

Personal Author(s) : Fathimulla, Ayub

PDF Url : ADA298951

Report Date : 01 JAN 1995

Pagination or Media Count : 120

Abstract : Future DoD requirements for RF and microwave systems for signal processing, communications, digital beam-forming, etc., mandate the development of high speed A/D converters. While conventional flash A/D converters have potential for high speed operation, they are highly complex circuits and are power hungry. In this program, we proposed and demonstrated a new approach to an A/D converter using resonant tunneling diodes (RTDs) which operate at higher speeds than conventional flash A/Ds and which are potentially much lower in complexity, power consumption and manufacturing cost. The achievement of a fully functional 5 bit A/D was by far the most significant accomplishment of this program. It proved unequivocally that our basic concept for the RTD-based ND worked. It also demonstrated that the selective epitaxial process we developed for integrating InP-based RTDs and MODFETs is a viable technology. It showed that we developed an overall process which produced working circuits. Moreover, our SPICE models for these RTDs are suitably accurate for designing and simulating circuits. The overall objective of this program was to demonstrate the feasibility of monolithic, 3- and 6-bit A/D converters with effective sampling rates of 10 and 4 GHz, respectively.

Descriptors :   *MICROWAVE EQUIPMENT, *ANALOG TO DIGITAL CONVERTERS, SIGNAL PROCESSING, HIGH RATE, MANUFACTURING, TUNNELING(ELECTRONICS), EPITAXIAL GROWTH, INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, SEMICONDUCTOR DIODES, COSTS, RESONANCE, MONOLITHIC STRUCTURES(ELECTRONICS), INDIUM PHOSPHIDES, ENERGY CONSUMPTION, MOSFET SEMICONDUCTORS.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE