Accession Number : ADA299135

Title :   Microwave Properties and Device Application of Ge(x)Si(1-x)/Si Superlattices.

Descriptive Note : Final rept. 1 Jul 91-31 Jan 92,

Corporate Author : CALIFORNIA UNIV LOS ANGELES DEVICE RESEARCH LAB

Personal Author(s) : Wang, Kang L.

PDF Url : ADA299135

Report Date : JAN 1992

Pagination or Media Count : 11

Abstract : This project entitled Microwave Properties and Device Application of Ge(x)Si(1-x)/Si Superlattices (N00014-91-J-1902) was a continuation of project entitled Fundamental Properties and Device Application of Ge(x)Si(1 -x)/Si Superlattices (N00014-89-K- 3227). Our investigation has been extended to expand the work in the study of Ge(x)Si(1-x)/Si superlattice and quantum well structures into the electromagnetic wave generation and detection applications. The study and its results for the additional 7-month period of experiment will briefly be discussed in the following. In this period, the energies of the minibands were investigated experimentally using the I-V-T measurement. The experimental values for the first and second miniband positions were 95 meV and 250 meV, respectively. These values were in good agreement with the calculated values of 91 meV and 220 meV from the emitter band edge taking the heavy and light-hole band splitting into consideration. jg p.2

Descriptors :   *MICROWAVES, *GERMANIUM ALLOYS, *SILICON ALLOYS, DETECTION, ELECTROMAGNETIC PROPERTIES, CRYSTAL LATTICES, STRUCTURES, SUPERLATTICES, COHERENCE, LIGHT, STRAIN(MECHANICS), VALENCE BANDS, RESONANCE, QUANTUM ELECTRONICS, GENERATORS, TUNNELING, DISCONTINUITIES, THERMIONIC EMISSION.

Subject Categories : Inorganic Chemistry
      Properties of Metals and Alloys
      Crystallography
      Radiofrequency Wave Propagation

Distribution Statement : APPROVED FOR PUBLIC RELEASE