Accession Number : ADA299138
Title : Erbium Doped Silicon LEDS Using IC Compatible Processing,
Descriptive Note : Technical rept.
Corporate Author : IMPLANT SCIENCES CORP WAKEFIELD MA
PDF Url : ADA299138
Report Date : 1995
Pagination or Media Count : 5
Abstract : The purpose of this program is to demonstrate the capability of the IC compatible process technology of rare earth ion implantation for the integration of photonic interconnection with silicon based electronics. As microchip technology pushes packing density, speed and power requirements ever higher, interconnects are getting smaller and more closely spaced. Design parameters and therefore performance characteristics are presently limited by the power dissipation, bandwidth, interconnection (pin-out) density, and reliability constraints of aluminum interconnects such as electromigration and stress migration. The most appropriate solution is to employ erbium doped silicon light emitters, silicon based waveguides, and silicon based detectors to provide an IC compatible process technology. jg p.2
Descriptors : *INTEGRATED CIRCUITS, *SILICON, *DOPING, *ERBIUM, STRESSES, REQUIREMENTS, ELECTRONICS, DETECTORS, ELECTROLUMINESCENCE, THIN FILMS, DISSIPATION, WAVEGUIDES, SEMICONDUCTORS, IMPURITIES, ION IMPLANTATION, RELIABILITY, ALUMINUM, CIRCUIT INTERCONNECTIONS, PHOTONS, MIGRATION, POWER, PACKING DENSITY, RARE EARTH ELEMENTS, LIGHT EMITTING DIODES.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Laminates and Composite Materials
Distribution Statement : APPROVED FOR PUBLIC RELEASE