Accession Number : ADA299170
Title : InAsP/InGaAs Materials Development for 2.1 Micron Avalanche Photodiodes. Phase 2.
Descriptive Note : Quarterly rept. no. 4, Jun-Aug 94,
Corporate Author : SENSORS UNLIMITED INC PRINCETON NJ
Personal Author(s) : Olsen, Gregory H. ; Goodman, Alvin
PDF Url : ADA299170
Report Date : 01 AUG 1994
Pagination or Media Count : 14
Abstract : A full 2.1 micrometers InAsP/InGaAs avalanche photodiode structure was fabricated, processed, and fully tested during the past quarter. Although results were disappointing, it was only a first try and in fact, represented a "leap" beyond our proposed schedule. Figures 1 through 3 contain summaries of the measured data. Briefly, breakdown voltages were below 10 volts and dark currents at -5V were in the microamp range. A cutoff wavelength of 2.10 micrometers was also measured. Avalanche gain was not observed under any conditions. We attribute to high dark currents to lattice mismatch at the InAsP/InGaAs interface and also the high background doping. A paper, based on our Phase I results, has been written (copy attached) and is undergoing internal review before being submitted to IEEE Photonics Technology Letters. jg p.2
Descriptors : *PHOTODIODES, *INDIUM, *AVALANCHE DIODES, MATERIALS, GALLIUM ARSENIDES, VOLTAGE, INTERNAL, GAIN, ARSENIDES, PHOSPHIDES, DOPING, CURRENTS, BREAKDOWN(ELECTRONIC THRESHOLD), AVALANCHE EFFECT(ELECTRONICS).
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE