Accession Number : ADA299209

Title :   Isotopically Enriched (28)Si Crystals for Electronics Applications.

Descriptive Note : Final rept. 1 Jul 91-30 Jun 93,

Corporate Author : YALE UNIV NEW HAVEN CT

Personal Author(s) : Ma, Tso-Ping

PDF Url : ADA299209

Report Date : 16 AUG 1993

Pagination or Media Count : 21

Abstract : The objective of this research is to study the thermal and electronic properties of isotopically enriched (28)Si epitaxial films which are potentially attractive for high density, high-speed electronic circuit applications. The natural abundance of Si is roughly 92.2% of (28)Si, 4.7% of (29)Si, and 3.1% of (30)Si, which is also roughly the composition of Si crystals currently used in industry. By removing the heavier isotopes (i.e., (29)Si and (30)Si), it is very likely that the enriched (28)Si crystal will have a much better thermal conductivity and carrier mobility, due to the reduction of the scattering centers arising from the heavy isotope 'impurities'. jg p.3

Descriptors :   *ELECTRONICS, *CRYSTALS, *SILICON, *ISOTOPES, THERMAL PROPERTIES, SCATTERING, ELECTROMAGNETIC PROPERTIES, FILMS, EPITAXIAL GROWTH, THERMAL CONDUCTIVITY, HIGH DENSITY, CIRCUITS, CARRIER MOBILITY.

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Isotopes
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE