Accession Number : ADA299217
Title : MBE Growth for Electronic and Photonic Device Applications.
Descriptive Note : Final rept. 30 Jun 91-30 Apr 95,
Corporate Author : TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER
Personal Author(s) : Streetman, Ben G.
PDF Url : ADA299217
Report Date : 24 JUL 1995
Pagination or Media Count : 9
Abstract : The goal of this research was to improve our understanding of MBE growth and to apply this understanding to practical devices for electronic and optoelectronic applications. We studied semiconductor quantum wells (QWs), achievable through control of layer thickness with monolayer accuracy, and distributed Bragg reflectors (DBRs) with high reflectivity designed for specific wavelengths. We developed microcavities for both light emitters and detectors, which have resonant cavities on the order of a single wavelength of light. The resonant cavity photodiode structure in effect decouples the quantum efficiency from the transit time. Lasers and detectors employing such resonant cavities on the wavelength scale will play an important role in a variety of future optoelectronic applications, and for optical interconnects.
Descriptors : *PHOTONICS, *QUANTUM EFFICIENCY, *PHOTODIODES, THICKNESS, ELECTROOPTICS, QUANTUM WELLS, ELECTRONIC EQUIPMENT, EPITAXIAL GROWTH, SEMICONDUCTOR DEVICES, CAVITIES, MOLECULAR BEAMS, LASER APPLICATIONS, RESONANCE, REFLECTIVITY, BRAGG ANGLE.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE