Accession Number : ADA299236
Title : 'InAsP/InGaAs Materials Development for 2.1 micrometers Avalanche Photodiodes. Phase 2.
Descriptive Note : Quarterly rept. no. 6, Jan-Mar 95,
Corporate Author : SENSORS UNLIMITED INC PRINCETON NJ
Personal Author(s) : Olsen, Gregory H. ; Goodman, Alvin
PDF Url : ADA299236
Report Date : 24 APR 1995
Pagination or Media Count : 11
Abstract : Detailed measurements were carried out on our full InGaAs/InAsP APD structure optimized to detect light out to 2.l micrometers. Avalanche gains well above ten were confirmed independently, at Sarnoff as well as at Princeton University. Figures 1 and 2 contains some typical data from two 100 micrometers-diameter mesa devices. Note the gains of 10-40, dark currents near or below 1 micro a at -10V and breakdown voltages of 30-35 volts. An 8 micrometers diameter single-mode fiber was used to scan light across the entire active region to check for edge breakdown. No enhanced gain was detected near the edges, thus validating our "p-substrate-mesa" approach to this device. jg p.2
Descriptors : *GALLIUM ARSENIDES, *INDIUM PHOSPHIDES, *PHOTODIODES, *AVALANCHE DIODES, SCANNING, FIBERS, MATERIALS, COMPOSITE MATERIALS, LIGHT, ELECTRONIC EQUIPMENT, VOLTAGE, SUBSTRATES, SEMICONDUCTOR DIODES, BREAKDOWN(ELECTRONIC THRESHOLD).
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Laminates and Composite Materials
Distribution Statement : APPROVED FOR PUBLIC RELEASE