Accession Number : ADA299259
Title : Erbium Doped Silicon LEDs Using IC Compatible Processing. Phase 1.
Descriptive Note : Final rept.,
Corporate Author : IMPLANT SCIENCES CORP WAKEFIELD MA
PDF Url : ADA299259
Report Date : 1995
Pagination or Media Count : 24
Abstract : This Final Report describes the technical approach and research effort during the Phase I STTR program. The purpose of the program is to demonstrate the capability of the IC compatible process technology of rare earth ion implantation for the integration of photonic interconnection with silicon based electronics. The objective of the Phase I research was to fabricate a simple light emitting device using low energy (<1MeV) rare earth ion implantation. Room temperature emission at the characteristic wave length of 1.54 micrometer was observed at room temperature. Additionally, many of the performance characteristics of the IC compatible 400 keV Er implanted LED's exceed those fabricated using more difficult and costly MeV implantation. jg p.4
Descriptors : *INTEGRATED CIRCUITS, *SILICON, *DOPING, *ERBIUM, *LIGHT EMITTING DIODES, FREQUENCY, ELECTRONICS, EMISSION, METHODOLOGY, LIGHT, ION IMPLANTATION, ROOM TEMPERATURE, LOW ENERGY, CIRCUIT INTERCONNECTIONS, PHOTONS, RARE EARTH ELEMENTS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE