Accession Number : ADA299370

Title :   Sublimation Growth of AlN Single Crystal on AlN Coated SiC Substrate. Phase 1.

Descriptive Note : Final rept. 1 Sep 94-1 Apr 95,

Corporate Author : APA OPTICS INC BLAINE MN

Personal Author(s) : Khan, M. A.

PDF Url : ADA299370

Report Date : 16 AUG 1995

Pagination or Media Count : 30

Abstract : The technical work of this program resulted in the conclusion that SiC reacted strongly with AlN at high temperature and single crystal AlN was not obtained using AlN coated SiC as seed material. Nevertheless, the undertaking of this program has led to the design and construction of a growth system especially growth crucible and its thermal shielding which eliminates system contamination and corrosion. By using this growth system controllable AlN sublimation-condensation experiments were carried out. Polycrystal AlN discs 20 mm in diameter and up to 4mm thick and single crystal grains and needles 1^3 mm in size were obtained. jg p.1

Descriptors :   *GROWTH(GENERAL), *ALUMINUM COATINGS, *SINGLE CRYSTALS, *SUBSTRATES, *NITRIDES, *ALUMINUM, *SUBLIMATION, *SILICON CARBIDES, THERMAL PROPERTIES, CORROSION, HIGH TEMPERATURE, SHIELDING, CONTAMINATION, CRUCIBLES.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE