Accession Number : ADA299419
Title : Study of Erbium-Doped Semiconductor Devices for Optoelectronics.
Descriptive Note : Final rept.,
Corporate Author : COLORADO UNIV AT BOULDER DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Pankove, J. ; Fauerstein, R. ; Willner, B.
PDF Url : ADA299419
Report Date : 30 JUN 1994
Pagination or Media Count : 15
Abstract : This project involves the physics of luminescence of erbium (Er) in silicon (Si), with the goal of an electrically pumped Si laser operating at 1550 nm. The AASERT grant funds one graduate student, Mr. Bruce Willner. A liquid nitrogen cooled luminescence measurement system, capable of measuring waveguides, is described. Spectral measurements performed using this system are presented for Er doped glass, as well as two laser diodes at approx. 1490nm. Various Si samples were studied. One set were implanted with Er ions by Dr. F. Namavar at Spire Corp. while the other set were grown epitaxially with in Situ Er doping using CVD by Prof. Varhue at the University of Vermont. The particular sample preparation conditions are described. Photoluminescence of these samples was studied using the l490nm, 40mW laser diodes, and an argon laser at 514 nm. No PL signal has been detected from our Er-doped Si samples, although we obtained a spectrum from Er-doped glass. Cathodoluminescence using a 15kV, 20 micro A current beam, at 10K did not reveal any Er luminescence either. Future plans are described. jg p.2
Descriptors : *SEMICONDUCTORS, *DOPING, *ERBIUM, DIODES, IONS, PREPARATION, PHOTOLUMINESCENCE, SPECTROMETRY, CHEMICAL VAPOR DEPOSITION, WAVEGUIDES, EPITAXIAL GROWTH, GLASS, LASERS, ION IMPLANTATION, PHYSICS, SILICON, CATHODOLUMINESCENCE, LIQUID NITROGEN, LUMINESCENCE, ARGON.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Lasers and Masers
Electrooptical and Optoelectronic Devices
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE