Accession Number : ADA299471
Title : Complementary 2-D MESFET for Low Power Electronics. Phase 1.
Descriptive Note : Interim rept. no. 6.
Corporate Author : ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA
PDF Url : ADA299471
Report Date : 28 SEP 1995
Pagination or Media Count : 3
Abstract : As detailed in the Phase I proposal, the project has four major tasks. These are (1) assessment of the p-channel 2-D MESFET device fabrication, (2) development of a p-channel 2-D MESFET model and implementation of the model into AIM-SPICE, (3) circuit simulations of complementary 2-D MESFET circuits using AIM-SPICE and comparison with conventional circuits, and, (4) analysis of manufacturability and technology insertion issues. This report summarizes progress in each task area through 28 SEP 95. jg p.2
Descriptors : *LOW POWER, *METALS, *ELECTRONIC EQUIPMENT, *FIELD EFFECT TRANSISTORS, *SEMICONDUCTORS, SIMULATION, TWO DIMENSIONAL, GALLIUM ARSENIDES, THIN FILMS, FABRICATION, POWER EQUIPMENT, CIRCUITS, SCHOTTKY BARRIER DEVICES.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE