Accession Number : ADA299471

Title :   Complementary 2-D MESFET for Low Power Electronics. Phase 1.

Descriptive Note : Interim rept. no. 6.

Corporate Author : ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA

PDF Url : ADA299471

Report Date : 28 SEP 1995

Pagination or Media Count : 3

Abstract : As detailed in the Phase I proposal, the project has four major tasks. These are (1) assessment of the p-channel 2-D MESFET device fabrication, (2) development of a p-channel 2-D MESFET model and implementation of the model into AIM-SPICE, (3) circuit simulations of complementary 2-D MESFET circuits using AIM-SPICE and comparison with conventional circuits, and, (4) analysis of manufacturability and technology insertion issues. This report summarizes progress in each task area through 28 SEP 95. jg p.2

Descriptors :   *LOW POWER, *METALS, *ELECTRONIC EQUIPMENT, *FIELD EFFECT TRANSISTORS, *SEMICONDUCTORS, SIMULATION, TWO DIMENSIONAL, GALLIUM ARSENIDES, THIN FILMS, FABRICATION, POWER EQUIPMENT, CIRCUITS, SCHOTTKY BARRIER DEVICES.

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE