Accession Number : ADA299532

Title :   Metal-Organic Vapor Phase Epitaxy of Controlled Deep Level Structures.

Descriptive Note : Final rept. Jun 92-Aug 95,

Corporate Author : WISCONSIN UNIV-MADISON DEPT OF CHEMICAL ENGINEERING

Personal Author(s) : Kuech, Thomas F. ; Bray, Kevin L.

PDF Url : ADA299532

Report Date : 23 AUG 1995

Pagination or Media Count : 10

Abstract : The controlled introduction of oxygen into GaAs and In(x)Ga(1-x)As during metal organic vapor phase epitaxy was studied through the development of unique oxygen doping sources. The electrical, optical and other deep level properties of the GaAs: defect were studied over an oxygen concentration range of 10(exp 16) to 10(exp 20)/cu cm. Oxygen introduces several levels into the band gap of GaAs leading to the compensation of the electrically active shallow dopants and a reduction in the band edge photoluminescence. High resistivity GaAs films can be produced using oxygen doping with resistivities in excess of 10(exp 9)/Ohms. cu cm indicating that this material can be one of the most effective device isolation materials yet developed. Since this process is easily integrated into the existing MOVPE growth technology, high resistivity layers can be made part of the device structure. The immediate application of these materials could be in microwave devices where the high resistivity of the materials can be used to eliminate the device crosstalk which can diminish the performance of these circuits. High power electronic devices and higher performance optical detectors may also be possible. jg p.1

Descriptors :   *METALS, *ORGANOMETALLIC COMPOUNDS, *EPITAXIAL GROWTH, *VAPOR PHASES, *ORGANIC COMPOUNDS, HIGH POWER, SOURCES, LAYERS, MATERIALS, RESISTANCE, GALLIUM ARSENIDES, FILMS, ELECTRONIC EQUIPMENT, ISOLATION, MICROWAVE EQUIPMENT, ELECTRICAL PROPERTIES, OXYGEN, ELECTRICAL RESISTANCE, DOPING, OPTICAL DETECTORS, CROSSTALK, CONCENTRATION(CHEMISTRY).

Subject Categories : Inorganic Chemistry
      Organic Chemistry
      Physical Chemistry
      Electrical and Electronic Equipment
      Crystallography
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE