Accession Number : ADA299605

Title :   SIC Static Induction Transistors.

Descriptive Note : Final rept.,

Corporate Author : WESTINGHOUSE SCIENCE AND TECHNOLOGY CENTER PITTSBURGH PA

Personal Author(s) : Clarke, R. C. ; Siergiej, R. R. ; Agarwal, A. K. ; Orphanos, P. A.

PDF Url : ADA299605

Report Date : 25 JAN 1995

Pagination or Media Count : 50

Abstract : SiC recessed gate static induction transistors (SITs) have been demonstrated for the first time. These early devices exhibit three times the power density of comparable silicon bipolar microwave devices at frequencies up to 500 MHz and exhibit efficient operation and high breakdown voltages. Key device fabrication processes developed in this program including reactive ion etching, Schottky gate metallizations, gate-source insulators and sharp epitaxial layer profiles.

Descriptors :   *GATES(CIRCUITS), *SILICON CARBIDES, *TRANSISTORS, HIGH POWER, CHIPS(ELECTRONICS), FABRICATION, VOLTAGE, EPITAXIAL GROWTH, SUBSTRATES, MICROWAVE EQUIPMENT, FIELD EFFECT TRANSISTORS, ETCHING, ELECTRICAL CONDUCTIVITY, MAGNETIC INDUCTION, DOPING, WAFERS, MONOLITHIC STRUCTURES(ELECTRONICS), SCHOTTKY BARRIER DEVICES, BREAKDOWN(ELECTRONIC THRESHOLD), ELECTROSTATIC FIELDS, BIPOLAR TRANSISTORS, S BAND, BASES(TRANSISTORS).

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE