Accession Number : ADA299696

Title :   A Novel mm-Wave Heterojunction JFET Technology with Suppressed Hole Injection.

Descriptive Note : Interim technical rept. for period ending Jan 95,

Corporate Author : CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Mishra, Umesh K.

PDF Url : ADA299696

Report Date : JUN 1995

Pagination or Media Count : 13

Abstract : It is necessary for a good compound semiconductor device technology to be simple and relatively transparent to the two commercially important families of materials namely GaAs and lnP based. The technology should be uniform, high performance and low cost to penetrate crucial large volume markets. The lack of a large bandgap insulator (with low surface states) in III-V materials eliminates the choice of an insulator gate technology. Further, lnP based Schottky-barrier gate technology is limited by the low Schottky barrier height (0.6 eV) on AlInAs and the gate recess nonuniformities. We have developed a InP based device technology which incorporates a p-n junction barrier as the gate. This results in low gate leakage and a high breakdown voltage. Most importantly, the gate to channel separation is determined solely by MBE growth which leads to a reproducible gate barrier height which translates to high threshold uniformity. The latest results include the development of p+InGaAs/AlInAs/n-InGaAs Junction Modulated HEMTs (JHEMTs) with cutoff frequencies f tau and f max of over 100 GHz and 200 GHz respectively, with an associated threshold voltage uniformity of 1 3.6 mV. This report describes this and the other important results obtained with the JHEMT technology.

Descriptors :   *HETEROJUNCTIONS, *FIELD EFFECT TRANSISTORS, MARKETING, LOW COSTS, THRESHOLD EFFECTS, GALLIUM ARSENIDES, GATES(CIRCUITS), VOLTAGE, MILLIMETER WAVES, N TYPE SEMICONDUCTORS, INDIUM PHOSPHIDES, SCHOTTKY BARRIER DEVICES, REPRODUCIBILITY, CHANNELS, BREAKDOWN(ELECTRONIC THRESHOLD), P TYPE SEMICONDUCTORS, HIGH VOLTAGE.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE