Accession Number : ADA299763
Title : The MBE Growth of InSb and InTlSb for Long-Wavelength Infrared Photodetectors and Focal Plane Arrays.
Descriptive Note : Semi-annual rept.,
Corporate Author : NORTHWESTERN UNIV EVANSTON IL DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCI ENCE
Personal Author(s) : Razeghi, Manijeh
PDF Url : ADA299763
Report Date : OCT 1995
Pagination or Media Count : 46
Abstract : There has been sustained interest in the area of narrow bandgap compound semiconductors due to their potential in many applications such as infrared photodetectors. These devices are essential for use in far infrared thermal imaging systems, pollution monitoring systems and free space communications systems. In fact, InSb large area detector arrays can be monolithically integrated into a single device along with the necessary signal processing components. InSb also has a low effective mass and narrow bandgap which results in its high electron mobility. This characteristic is useful in high frequency devices and magnetoresistive sensors for position sensing in the automotive industry. Current InSb photodetector technology uses bulk InSb material with ion implanted p and n layers. InSb substrates, however, are not semi-insulating which complicates monolithic integration and increases electrical noise.
Descriptors : *ARRAYS, *EPITAXIAL GROWTH, *MOLECULAR BEAMS, *PHOTODETECTORS, *FOCAL PLANES, *LONG WAVELENGTHS, *INDIUM ANTIMONIDES, *THALLIUM, *AREA SCANNING, SIGNAL PROCESSING, POSITION(LOCATION), HIGH FREQUENCY, DETECTORS, HIGH RATE, SPACE SYSTEMS, MONITORING, LAYERS, SIGNAL TO NOISE RATIO, ENERGY GAPS, SUBSTRATES, PROCESSING EQUIPMENT, SEMICONDUCTORS, INTEGRATION, INFRARED DETECTORS, MONOLITHIC STRUCTURES(ELECTRONICS), POLLUTION, ANTENNA ARRAYS, SPACE COMMUNICATIONS, NOISE(ELECTRICAL AND ELECTROMAGNETIC), NARROWBAND, ELECTRON MOBILITY, MAGNETORESISTANCE, AUTOMOTIVE INDUSTRY.
Subject Categories : Optical Detection and Detectors
Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE