Accession Number : ADA299767
Title : High-Density Plasma Source for Large-Area Chemical Vapor Deposition of Diamond Films.
Descriptive Note : Monthly rept. 1 Feb-28 Feb 95,
Corporate Author : SCIENCE RESEARCH LAB INC SOMERVILLE MA
Personal Author(s) : Xing, Chen
PDF Url : ADA299767
Report Date : 05 MAY 1995
Pagination or Media Count : 4
Abstract : During this program Science Research Laboratory (SRL) and the Plasma Processing Group in the Department of Chemical Engineering at MIT are developing a large-area, directed plasma/atomic beam source for diamond deposition. The plasma source is based on an inductively-driven plasma accelerator that efficiently produces a high density (l0(exp 14-10(exp 17)/cu cm) plasma over an area of 0.1-1 square meters. The goal of this effort is to experimentally demonstrate the technical feasibility of employing the plasma source for high-throughput diamond deposition, through characterization of plasma parameters and preliminary diamond deposition experiments. A reactor design study will also be completed during Phase I, leading to an engineering design of a large-area plasma reactor for Phase II implementation. The period of performance is from 30 September 1994 to 29 May 1995. jg p.2
Descriptors : *PLASMAS(PHYSICS), *FILMS, *DIAMONDS, *CHEMICAL VAPOR DEPOSITION, *HIGH DENSITY, SOURCES, PARAMETERS, PROCESSING, RESEARCH FACILITIES, FEASIBILITY STUDIES, CHEMICAL ENGINEERING, REACTOR OPERATION, ATOMIC BEAMS, PLASMA ACCELERATORS.
Subject Categories : Inorganic Chemistry
Laminates and Composite Materials
Plasma Physics and Magnetohydrodynamics
Distribution Statement : APPROVED FOR PUBLIC RELEASE