Accession Number : ADA299780

Title :   Low Defect SiC Material by Liquid Phase Electro-Epitaxial Lateral Overgrowth.

Descriptive Note : Final rept. 30 Sep 94-29 Mar 95,

Corporate Author : ASTROPOWER INC NEWARK DE

Personal Author(s) : Mauk, Michael G.

PDF Url : ADA299780

Report Date : 21 APR 1995

Pagination or Media Count : 43

Abstract : The Phase I program was primarily an experimental study to assess the feasibility of producing high-quality silicon carbide (SiC) heteroepitaxial films on silicon substrates using a sequential combination of chemical vapor deposition and metallic solution growth. These SiC-on-silicon structures are being developed for low-cost, large-area surrogate substrates to replace SiC wafers presently used in semiconductor device applications. An epitaxial lateral overgrowth process is designed to eliminate micropipe defects and stacking faults, and substantially reduce dislocations due to thermal stress and lattice mismatch. Selective heteroepitaxy of SiC on (111) 5 was demonstrated using hexamethyldisilane (HMDS) as a precursor for Si and C. Metallic solution growth of SiC in the temperature range of 950 to 1270 deg C from copper-silicon carbon; zinc-aluminum-silicon-carbon; and nickel-silicon-carbon melts are described. Experiments showing extensive liquid-phase epitaxial lateral overgrowth of silicon on patterned, masked silicon substrates, and partial epitaxial lateral overgrowth of SiC on patterned, masked SiC are reported. These experiments indicate the feasibility of the proposed approach. In addition, an extensive literature survey and phase equilibrial modeling for solution growth of SiC was included in the Phase I work. jg p.1

Descriptors :   *GROWTH(GENERAL), *EPITAXIAL GROWTH, *DEFECTS(MATERIALS), *SILICON CARBIDES, METALS, TEMPERATURE, MODELS, LITERATURE SURVEYS, SOLUTIONS(MIXTURES), METHYL RADICALS, FILMS, ELECTROCHEMISTRY, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, SEMICONDUCTOR DEVICES, EQUILIBRIUM(GENERAL), PHASE STUDIES, CARBON, ELECTRICAL PROPERTIES, PIPES, DISLOCATIONS, ALUMINUM, SILANES, ZINC, NICKEL, RANGE(EXTREMES), STACKING, THERMAL STRESSES, FAULTS.

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Laminates and Composite Materials
      Properties of Metals and Alloys
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE