Accession Number : ADA299808

Title :   A New Diamond Emitter Device.

Descriptive Note : Quarterly progress rept. no. 1,

Corporate Author : PTS CO RALEIGH NC

Personal Author(s) : Driscoll, John C.

PDF Url : ADA299808

Report Date : 10 APR 1995

Pagination or Media Count : 17

Abstract : The goal of the program is to produce and evaluate more efficient emitters using diamond semiconductor technology; and to propose use of electronic diamond technology in a phase II EBS (Electron Beam Semiconductor) device application. Accordingly, several samples of the rugged, type 6H SiC, high voltage EBS diode targets were obtained from Cree research. The SiC p-n junction diodes (20X2O mils) were evaluated on the PTS tektronix 576 curve tracer (fig. 11) and deemed suitable for use as reverse biased targets for the potential Phase II EBS device. These SiC devices have the potential to be more suitable as EBS targets than the Si diodes previously used. However, the small size will require paralleling until Cree can develop larger, defect free SiC crystals.

Descriptors :   *DIAMONDS, *EMITTERS, DIODES, ELECTRONICS, EFFICIENCY, SINGLE CRYSTALS, CRYSTALS, TARGETS, ELECTRON BEAMS, DEFECTS(MATERIALS), REVERSIBLE, N TYPE SEMICONDUCTORS, BIAS, SILICON CARBIDES, P TYPE SEMICONDUCTORS, HIGH VOLTAGE, JUNCTION DIODES.

Subject Categories : Electricity and Magnetism
      Inorganic Chemistry
      Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE