Accession Number : ADA299983

Title :   GaN Report for Additional Funding. Phase 2.

Descriptive Note : Semi-annual technical rept.,

Corporate Author : EMCORE CORP SOMERSET NJ

Personal Author(s) : Stall, R. A. ; Yuan, C. ; Salagaj, T. ; Gurary, A.

PDF Url : ADA299983

Report Date : 03 FEB 1995

Pagination or Media Count : 14

Abstract : The superior physical properties of gallium nitride (GaN) translate into a potentially very useful semiconductor material for various electronic and optical devices requiring a wide bandgap energy, high breakdown fields, high melting points, high thermal conductivity and high saturation velocities, etc. The recent breakthroughs in GaN-based materials (InGaN/GaN double heterojunction structure), such as commercially available blue LEDs, greatly enhanced the driving force of III-V nitrides, particularly GaN research due to its direct bandgap and promising optical properties.

Descriptors :   *SEMICONDUCTORS, *NITRIDES, *GALLIUM COMPOUNDS, OPTICAL EQUIPMENT, OPTICAL PROPERTIES, HIGH RATE, PHYSICAL PROPERTIES, MATERIALS, COMPOSITE MATERIALS, HIGH TEMPERATURE, HIGH VELOCITY, HETEROJUNCTIONS, ENERGY, ELECTRONIC EQUIPMENT, ENERGY GAPS, SATURATION, BROADBAND, THERMAL CONDUCTIVITY, GROUP III COMPOUNDS, GROUP V COMPOUNDS, INDIUM, MELTING POINT, FORCE(MECHANICS), LIGHT EMITTING DIODES.

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Laminates and Composite Materials
      Optics
      Thermodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE