Accession Number : ADA300209

Title :   Novel Growth Method for High Quality GaN Heteroepitaxy.

Descriptive Note : Bi-Monthly progress rept. no. 2,

Corporate Author : NZ APPLIED TECHNOLOGIES WOBURN MA

Personal Author(s) : Norris, Peter E.

PDF Url : ADA300209

Report Date : 01 FEB 1995

Pagination or Media Count : 7

Descriptors :   *EPITAXIAL GROWTH, *GALLIUM COMPOUNDS, ALUMINUM COMPOUNDS, PLASMAS(PHYSICS), HALL EFFECT, PHOTOLUMINESCENCE, THIN FILMS, X RAY DIFFRACTION, SINGLE CRYSTALS, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, NITRIDES, QUALITY, SILICON, DOPING, GAS DISCHARGES, SILICON CARBIDES, RAMAN SPECTRA.

Subject Categories : Crystallography
      Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE