Accession Number : ADA300332

Title :   Electroluminescing Porous Silicon (ELPS) Device.

Descriptive Note : Final rept.,

Corporate Author : CALIFORNIA UNIV DAVIS DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Penczek, John ; Smith, Rosemary L.

PDF Url : ADA300332

Report Date : 11 AUG 1995

Pagination or Media Count : 15

Abstract : The main goal of this project was to determine the mechanism of operation of an all silicon, electroluminescing device. The device consists of an n+ silicon "wire" supported on top of a layer of porous silicon. Other aims included the evaluation of the device's light emitting efficiency and it's potential as a silicon-based light source. The device emits light over a broad spectrum, extending from the visible into the infrared, with two dominant peaks, at 1.3 and 2.05 microns. An optical quantum efficiency of better than 6% was determined. The device demonstrated continuous device operation for over 150 hours. The spectral data strongly suggests that blackbody radiation is the dominant emission mechanism in our device. However, there is also evidence of hot electron induced emission. We suspect that hot electrons are injected into the interface with the underlying porous silicon, from which some of the emission originates.

Descriptors :   *ELECTROLUMINESCENCE, *SILICON, *POROUS MATERIALS, EMISSION, OPTICAL PROPERTIES, LAYERS, WIRE, LIGHT, ELECTRONS, SPECTRA, OPERATION, QUANTUM EFFICIENCY, BLACKBODY RADIATION.

Subject Categories : Inorganic Chemistry
      Laminates and Composite Materials
      Electricity and Magnetism
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE