Accession Number : ADA300606

Title :   Double Superlattice GaAs IR Transistors.

Descriptive Note : Final rept. 1 Nov 90-31 Dec 93,

Corporate Author : PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s) : Tsui, D. C.

PDF Url : ADA300606

Report Date : 30 AUG 1995

Pagination or Media Count : 6

Abstract : A superlattice structure can be incorporated into a quantum-well infrared detector as an electron bandpass filter to block electrons with energies higher or lower than the miniband energy. Electrons with energies inside the miniband can relax their energies to the lower edge of the miniband as they pass through the superlattice. Therefore, the superlattice not only filter the electron energy but also keeps the filtered electrons to a minimum energy. We have realized these expected advantages, greatly improved the detectivity of the device, and demonstrated the operation of a background limited IR transistor for T up to 90K. The research was carried out in these stages as described below.

Descriptors :   *GALLIUM ARSENIDES, *SUPERLATTICES, *INFRARED DETECTORS, *TRANSISTORS, CRYSTAL STRUCTURE, EDGES, CRYSTAL LATTICES, QUANTUM WELLS, ELECTRON ENERGY, BANDPASS FILTERS.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Crystallography
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE