Accession Number : ADA300640
Title : Multi-Scale Approach to Semiconductor Device Simulation.
Descriptive Note : Final rept. 1992-1995,
Corporate Author : ILLINOIS UNIV AT URBANA
Personal Author(s) : Hess, Karl
PDF Url : ADA300640
Report Date : 1995
Pagination or Media Count : 7
Abstract : A brief summary of research accomplishments during the past three years is given, along with a list of 18 published papers that contain the details of this work. Also included is a list of invited presentations of ARO sponsored research. These accomplishments include: essential completion of our full band Monte Carlo simulator with the first principles derivation of deformation potentials from the same ionic potentials used to calculate the crystal band-structure; development of a powerful density functional based numerical method to calculate quantum capacitance in nanostructures including Coulomb, size-quantization and many-body contributions to the "charging" energy; and establishment of an entirely new "quantum Monte Carlo" method based on Schroedinger's equation for simulating dissipative quantum transport, a method that bridges the gap between phase-incoherent semiclassical transport and phase-coherent quantum transport.
Descriptors : *SIMULATION, *QUANTUM THEORY, *SEMICONDUCTOR DEVICES, CRYSTAL STRUCTURE, DEFORMATION, COHERENCE, DISSIPATION, MONTE CARLO METHOD, PHASE, INCOHERENCE, TRANSPORT, SCHRODINGER EQUATION, BRIDGES, CAPACITANCE, N BODY PROBLEM.
Subject Categories : Electrical and Electronic Equipment
Electricity and Magnetism
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE