Accession Number : ADA300640

Title :   Multi-Scale Approach to Semiconductor Device Simulation.

Descriptive Note : Final rept. 1992-1995,

Corporate Author : ILLINOIS UNIV AT URBANA

Personal Author(s) : Hess, Karl

PDF Url : ADA300640

Report Date : 1995

Pagination or Media Count : 7

Abstract : A brief summary of research accomplishments during the past three years is given, along with a list of 18 published papers that contain the details of this work. Also included is a list of invited presentations of ARO sponsored research. These accomplishments include: essential completion of our full band Monte Carlo simulator with the first principles derivation of deformation potentials from the same ionic potentials used to calculate the crystal band-structure; development of a powerful density functional based numerical method to calculate quantum capacitance in nanostructures including Coulomb, size-quantization and many-body contributions to the "charging" energy; and establishment of an entirely new "quantum Monte Carlo" method based on Schroedinger's equation for simulating dissipative quantum transport, a method that bridges the gap between phase-incoherent semiclassical transport and phase-coherent quantum transport.

Descriptors :   *SIMULATION, *QUANTUM THEORY, *SEMICONDUCTOR DEVICES, CRYSTAL STRUCTURE, DEFORMATION, COHERENCE, DISSIPATION, MONTE CARLO METHOD, PHASE, INCOHERENCE, TRANSPORT, SCHRODINGER EQUATION, BRIDGES, CAPACITANCE, N BODY PROBLEM.

Subject Categories : Electrical and Electronic Equipment
      Physical Chemistry
      Crystallography
      Electricity and Magnetism
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE