Accession Number : ADA300689

Title :   Low Defect SiC Material by Liquid-Phase Epitaxial Lateral Overgrowth.

Descriptive Note : Progress rept. no. 2,

Corporate Author : ASTROPOWER INC NEWARK DE

Personal Author(s) : Mauk, Michael G.

PDF Url : ADA300689

Report Date : 29 JAN 1994

Pagination or Media Count : 7

Abstract : SiC epitaxial films are grown on SiC substrates using a relatively low-temperature liquid-phase epitaxy process. Liquid-metals (e.g., lead, tin, germanium, or other metals, or mixtures of these metals) are used as solvents for solution growth of SiC. The targeted growth temperatures are 1000 to 1200 deg C. The process is similar to conventional iqiud-phase epitaxy as commonly applied to growth of III-V heterostuctures. Next, having established a reproducible, low-temperature solution-growth technique for SiC, a process is developed whereby the SiC substrate is first masked prior to growth with a dielectric or refractory metal coating.The masking layer is patterned with stripe openings. A typical stripe pattern has 10-micron wide stripes on 100-micron spacings. The exposed SiC surfaces at the stripe openings serve as sites for preferential nucleation of SiC during a subsequent LPE step.

Descriptors :   *EPITAXIAL GROWTH, *DEFECTS(MATERIALS), *LIQUID PHASES, *SILICON CARBIDES, LOW TEMPERATURE, SOLUTIONS(MIXTURES), LAYERS, FILMS, SUBSTRATES, NUCLEATION, VAPOR PHASES, COATINGS, DIELECTRIC PROPERTIES, PATTERNS, SOLVENTS, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, REFRACTORY METALS, TIN, GERMANIUM, MASKING, LIQUID METALS, REFRACTORY COATINGS.

Subject Categories : Inorganic Chemistry
      Laminates and Composite Materials
      Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE