Accession Number : ADA300734

Title :   Epitaxial Growth of Diamond Films Using Low Energy C- Ion Beam Surface Modification.

Descriptive Note : Progress rept.,

Corporate Author : SKION CORP HOBOKEN NJ

Personal Author(s) : Kim, Seong I.

PDF Url : ADA300734

Report Date : 12 FEB 1995

Pagination or Media Count : 10

Abstract : Proposes Performance Plan. Construct the C-ion source and MW plasma CVD system. Investigate the epitaxial growth processing technology by controlling the surface modification process and produce PE CVD. Characterize the optical and structural properties of the typical samples. Refine deposition process design. Final report. According to the above proposed performance plan, we were constructing the deposition system and C-ion source in a previous month. The proposed work will be performed in two independent systems: (1) obtain C-ion beam parameters for the optimum surface configuration for epitaxial diamond nucleation in LEED installed UHV chamber, (2) epitaxial growth studies in ion beam CVD system where C- ion gun will pre-treat the sample surface according to the parameters obtained in UHV system and further growth will be performed by Microwave Plasma Enhanced CVD (MWPE CVD) process. jg p.2

Descriptors :   *FILMS, *DIAMONDS, *EPITAXIAL GROWTH, *ION BEAMS, *SURFACES, *LOW ENERGY, IONS, OPTICAL PROPERTIES, OPTIMIZATION, MODIFICATION, PARAMETERS, STRUCTURAL PROPERTIES, PROCESSING, PLASMAS(PHYSICS), CHEMICAL VAPOR DEPOSITION, MICROWAVES, NUCLEATION, CONFIGURATIONS, ELECTRON DIFFRACTION, ION SOURCES.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials
      Atomic and Molecular Physics and Spectroscopy
      Particle Accelerators

Distribution Statement : APPROVED FOR PUBLIC RELEASE