Accession Number : ADA301088

Title :   Complementary 2-D MESFET for Low Power Electronics. Phase 1.

Descriptive Note : Final rept. 2 May-1 Nov 95,

Corporate Author : ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA

Personal Author(s) : Peatman, William C.

PDF Url : ADA301088

Report Date : 01 NOV 1995

Pagination or Media Count : 12

Abstract : The purpose of this project was to determine the feasibility of developing a p-channel 2-D MESFET for future low power complementary IC technologies. The project demonstrated the fabrication of prototype p-channel 2-D MESFETs having promising electrical characteristics, developed a p-channel 2-D MESFET device model which was implemented into a commercially available SPICE program, demonstrated the SPICE simulation of p-channel 2-D MESFET device characteristics as well as complementary 2-D MESFET circuits, and demonstrated that the complementary 2-D MESFET should have significantly lower power-delay product compared with existing technologies. Finally, the project evaluated the manufacturability and technology insertion issues of the new technology. jg p.1

Descriptors :   *LOW POWER, *ELECTRONIC EQUIPMENT, COMPUTER PROGRAMS, METALS, TWO DIMENSIONAL, INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, SEMICONDUCTORS, ELECTRICAL PROPERTIES, POWER EQUIPMENT.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE