Accession Number : ADA301088
Title : Complementary 2-D MESFET for Low Power Electronics. Phase 1.
Descriptive Note : Final rept. 2 May-1 Nov 95,
Corporate Author : ADVANCED DEVICE TECHNOLOGIES INC CHARLOTTESVILLE VA
Personal Author(s) : Peatman, William C.
PDF Url : ADA301088
Report Date : 01 NOV 1995
Pagination or Media Count : 12
Abstract : The purpose of this project was to determine the feasibility of developing a p-channel 2-D MESFET for future low power complementary IC technologies. The project demonstrated the fabrication of prototype p-channel 2-D MESFETs having promising electrical characteristics, developed a p-channel 2-D MESFET device model which was implemented into a commercially available SPICE program, demonstrated the SPICE simulation of p-channel 2-D MESFET device characteristics as well as complementary 2-D MESFET circuits, and demonstrated that the complementary 2-D MESFET should have significantly lower power-delay product compared with existing technologies. Finally, the project evaluated the manufacturability and technology insertion issues of the new technology. jg p.1
Descriptors : *LOW POWER, *ELECTRONIC EQUIPMENT, COMPUTER PROGRAMS, METALS, TWO DIMENSIONAL, INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, SEMICONDUCTORS, ELECTRICAL PROPERTIES, POWER EQUIPMENT.
Subject Categories : Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE