Accession Number : ADA301117
Title : High Speed Heterostructure Transistors.
Descriptive Note : Final rept. 1 Jun 92-31 May 95,
Corporate Author : ILLINOIS UNIV AT URBANA
Personal Author(s) : Morkoc, Hadis
PDF Url : ADA301117
Report Date : 31 MAY 1995
Pagination or Media Count : 2
Abstract : The growth and characterization of the 111-V nitrides has been the focus of intense effort. A major problem plaguing nitride growth has been the absence of a good substrate to grow on. Currently sapphire and 6H-SiC are the substrates of choice for nitride growth with approximately equal results, although growth on sapphire yields slightly better results. We have addressed this problem in a fundamental and innovative way and given fresh insight into the considerations that must guide subsequent substrate development.
Descriptors : *HETEROJUNCTIONS, *TRANSISTORS, SUBSTRATES, NITRIDES, SAPPHIRE, YIELD, SILICON CARBIDES, CRYSTAL GROWTH.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE