Accession Number : ADA301117

Title :   High Speed Heterostructure Transistors.

Descriptive Note : Final rept. 1 Jun 92-31 May 95,

Corporate Author : ILLINOIS UNIV AT URBANA

Personal Author(s) : Morkoc, Hadis

PDF Url : ADA301117

Report Date : 31 MAY 1995

Pagination or Media Count : 2

Abstract : The growth and characterization of the 111-V nitrides has been the focus of intense effort. A major problem plaguing nitride growth has been the absence of a good substrate to grow on. Currently sapphire and 6H-SiC are the substrates of choice for nitride growth with approximately equal results, although growth on sapphire yields slightly better results. We have addressed this problem in a fundamental and innovative way and given fresh insight into the considerations that must guide subsequent substrate development.

Descriptors :   *HETEROJUNCTIONS, *TRANSISTORS, SUBSTRATES, NITRIDES, SAPPHIRE, YIELD, SILICON CARBIDES, CRYSTAL GROWTH.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE