Accession Number : ADA301129

Title :   Ion Doped Quantum Well Lasers.

Descriptive Note : Final rept. 30 Sep 93-29 Sep 95,

Corporate Author : SPIRE CORP BEDFORD MA

Personal Author(s) : Greenwald, Anton

PDF Url : ADA301129

Report Date : 11 JUN 1995

Pagination or Media Count : 56

Abstract : The objective of this research was to fabricate erbium doped diode lasers which were expected to be temperature independent, frequency stable sources of 1538 nm light optical communications. New metalorganic sources of erbium were developed that enabled metalorganic chemical vapor deposition (MOCVD) of Er:GaAs and AlGaAs structures with low levels of carbon and oxygen. Substitutional doping levels to over 10(exp 20) per cubic centimeter were demonstrated with good photo- and cathode-luminescence properties. LED's and diode laser structures were fabricated with erbium placed (a) so as to be pumped directly by electron hole pair recombination, and (b) by optical absorption at 980um. However, lasing at 1538nm was not observed in either case. The program did result in two commercial products: the erbium metalorganic source chemicals, and laser diode arrays with 980nm emission which can be used to pump erbium glass solid state lasers.

Descriptors :   *GALLIUM ARSENIDE LASERS, *DIODE LASERS, STABILITY, ARRAYS, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, OPTICAL COMMUNICATIONS, SEMICONDUCTOR DIODES, LIGHT SOURCES, LOW LEVEL, DOPING, ERBIUM, LIGHT EMITTING DIODES.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE