Accession Number : ADA301934

Title :   Silicon-Germanium-Carbon Alloys for Optoelectronic Devices (FY91 AASERT).

Descriptive Note : Final rept. 1 Jun 92-31 May 95,

Corporate Author : DELAWARE UNIV NEWARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Kolodzey, James

PDF Url : ADA301934

Report Date : 31 MAY 1995

Pagination or Media Count : 132

Abstract : This research resulted the growth on the growth of this new semiconductor alloys, silicon-germanium carbon, by the technique of molecular beam epitaxy (MBE). The alloys have been characterized by several techniques including Rutherford backscattering spectronietry (RBS) for composition, and Fourier transform infrared spectrometry (FTIR) for optical absorption. The Si%%%%%Ge%C% alloys were successfully grown using all solid sources for the Si, Ge and C. Substrates were 75 mm diameter (100) - oriented Si wafers, and alloy layer thicknesses ranged from 10 nm to 3 %m.

Descriptors :   *FOURIER TRANSFORMATION, *ELECTROOPTICS, *EPITAXIAL GROWTH, *MOLECULAR BEAMS, *GERMANIUM ALLOYS, *SILICON ALLOYS, *CARBON ALLOYS, SOURCES, OPTICAL PROPERTIES, TEMPERATURE, THICKNESS, INFRARED SPECTROSCOPY, SYMPOSIA, LAYERS, EDGES, GROWTH(GENERAL), X RAY DIFFRACTION, SUBSTRATES, BACKSCATTERING, CARBON, SOLIDS, ALLOYS, ELECTRON BEAMS, RADIATION ABSORPTION, DOCUMENTS, INFRARED SPECTROMETERS.

Subject Categories : Metallurgy and Metallography
      Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE