Accession Number : ADA301962
Title : High Power, High Efficiency MESFETs and HEMTs.
Descriptive Note : Final rept. 15 Jun 92-14 Jun 95,
Corporate Author : CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Mishra, Umesh K.
PDF Url : ADA301962
Report Date : 14 JUN 1995
Pagination or Media Count : 8
Abstract : For the duration of the project dated above, the work on the AASERT program concentrated on improving the power performance of GaAs MESFETs with LTG GaAs surface passivation layers by studying the effects of source and drain contacts regrown by MOCVD on both device breakdown and gain.
Descriptors : *FIELD EFFECT TRANSISTORS, HIGH POWER, HIGH RATE, GALLIUM ARSENIDES, EFFICIENCY, CHEMICAL VAPOR DEPOSITION, METAL OXIDE SEMICONDUCTORS, SURFACES, PASSIVITY.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE