Accession Number : ADA301962

Title :   High Power, High Efficiency MESFETs and HEMTs.

Descriptive Note : Final rept. 15 Jun 92-14 Jun 95,

Corporate Author : CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Mishra, Umesh K.

PDF Url : ADA301962

Report Date : 14 JUN 1995

Pagination or Media Count : 8

Abstract : For the duration of the project dated above, the work on the AASERT program concentrated on improving the power performance of GaAs MESFETs with LTG GaAs surface passivation layers by studying the effects of source and drain contacts regrown by MOCVD on both device breakdown and gain.

Descriptors :   *FIELD EFFECT TRANSISTORS, HIGH POWER, HIGH RATE, GALLIUM ARSENIDES, EFFICIENCY, CHEMICAL VAPOR DEPOSITION, METAL OXIDE SEMICONDUCTORS, SURFACES, PASSIVITY.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE