Accession Number : ADA301963
Title : Ion Doped Quantum Well Lasers.
Descriptive Note : Final rept. 30 Sep 93-29 Sep 95,
Corporate Author : SPIRE CORP BEDFORD MA
Personal Author(s) : Greenwald, Anton
PDF Url : ADA301963
Report Date : SEP 1995
Pagination or Media Count : 56
Abstract : The objective of this research was to fabricate erbium doped diode lasers which were expected to be temperature independant, frequency stable sources of 1538 nm light optical communications. New metaloorganic sources of erbium were developed that enabled metaloorganic chemical vapor deposition (MOCVD) of Br:GaAs and AlGaAs structures with low levels of carbon and oxygen. Substitutional doping levels to over 10(exp20) per cubic centimeter were demonstrated with good photo- and cathode-luminesce properties. LED's and diode laser structures were fabricated with erbium placed (a) so as to be pumped directly by electron hole pair recombination, and (b) by optical absorption at 980nm. However, lasing at 1538nm was not observed in either case. The program did result in two commercial products: the erbium metaloorganic source chemicals, and laser diode arrays with 980 nm emission which can be used to pump erbium glass solid state lasers.
Descriptors : *OPTICAL COMMUNICATIONS, *DIODE LASERS, STABILITY, QUANTUM WELLS, ARRAYS, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, DOPING, LOW LIGHT LEVELS, ERBIUM, GALLIUM ARSENIDE LASERS.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE