Accession Number : ADA302057

Title :   Structural Characterization of Epitaxial Layers for Infrared Detectors.

Descriptive Note : Final rept. 1 Jun 93-31 May 95,

Corporate Author : CARNEGIE-MELLON UNIV PITTSBURGH PA DEPT OF ELECTRICAL AND COMPUTER ENGINEERIN G

Personal Author(s) : Greve, D. W.

PDF Url : ADA302057

Report Date : 02 NOV 1995

Pagination or Media Count : 12

Abstract : UHV/CVD is a growth technique highly suitable for deposition of Ge(x)Si(1-x) heterostructures for long-wavelength infrared detectors. We have used transmission electron microscopy to determine favorable conditions for the growth of these structures. Multiple quantum well structures can be grown with excellent quality without any evidence of nonplanar growth while heterojunction internal photoemission structures incorporated thicker Ge(x)Si(1-x) layers do exhibit nonplanar growth. A modest decrease in growth temperature to 550 deg C is sufficient to solve the problem. jg p.1

Descriptors :   *STRUCTURAL PROPERTIES, *CHEMICAL VAPOR DEPOSITION, *EPITAXIAL GROWTH, *INFRARED DETECTORS, FREQUENCY, TEMPERATURE, QUANTUM WELLS, HETEROJUNCTIONS, STRUCTURES, ELECTRON MICROSCOPY, TRANSMITTANCE, PHOTOELECTRIC EMISSION, INTERNAL, SILICON, QUANTUM ELECTRONICS, NONPLANAR, LONG WAVELENGTHS, GERMANIUM, ULTRAHIGH VACUUM.

Subject Categories : Inorganic Chemistry
      Crystallography
      Optics
      Quantum Theory and Relativity
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE