Accession Number : ADA302138

Title :   Modeling, Simulation and Design of High Pressure Crystal Growth Processes.

Descriptive Note : Final rept. 1 Oct 94-30 Sep 95,

Corporate Author : GT EQUIPMENT TECHNOLOGY INC NASHUA NH

Personal Author(s) : Gupta, Kedar P.

PDF Url : ADA302138

Report Date : NOV 1995

Pagination or Media Count : 172

Abstract : Major research goals for this STTR project in Phase I were (a) development of a high-resolution process model suitable for high pressure crystal growth (HPCG), (b) special experiments for thermophysical property measurement, and (c) a preliminary design of an advanced HPCG furnace to transfer the DoD technology of "one-step in-situ synthesis and MLEK growth of InP crystals" for commercialization. An extraordinary progress was made in all of these areas. Several meetings were held with Rome Laboratory researchers to identify the shortcomings of the prsent furnace and needs for the future generation high pressure systems. A computer model, MASTRAPP was developed that is better than all other existing numerical models for multiphase, multicomponent processes with moving boundaries and free surfaces. MASTRAPP2d with a reference manual is now available for distribution to the interested groups of researchers. New experiments were designed to obtain property data for InP density, thermal conductivity, electrical resistivity and phosphorus vapor pressure. A preliminary design for an advanced HPCG furnace was developed based on these experiments, extensive HPCG simulations and process details from Rome Laboratory. jg p1

Descriptors :   *SIMULATION, *MODELS, *HIGH PRESSURE, *CRYSTAL GROWTH, COMPUTER PROGRAMS, MATHEMATICAL MODELS, COMPUTERIZED SIMULATION, MEASUREMENT, SYNTHESIS, MOTION, CRYSTALS, HIGH RESOLUTION, SURFACES, BOUNDARIES, THERMAL CONDUCTIVITY, ELECTRICAL RESISTANCE, TRANSFER, INDIUM PHOSPHIDES, VAPOR PRESSURE, PHOSPHORUS, FURNACES, MANUALS, THERMOPHYSICAL PROPERTIES.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE