Accession Number : ADA302438
Title : Ion Implantation Processes for Heteroepitaxial Nucleation of Diamond.
Descriptive Note : Final technical rept. 28 Jul 92-30 Apr 95,
Corporate Author : EPION CORP BEDFORD MA
Personal Author(s) : Kirkpatrick, Allen
PDF Url : ADA302438
Report Date : SEP 1995
Pagination or Media Count : 41
Abstract : The objective of this program has been to employ variations of high temperature ion implantation-outdiffusion processing to promote heteroepitaxial nucleation of diamond on a foreign substrate. The program has involved development of ion implantation apparatus with capabilities for processing at very high temperatures and for in-situ CVD diamond growth. Studies have been conducted to examine implantation of carbon ions, sometimes in conjunction with other ions such as hydrogen or fluorine, as a possible means to induce diamond nucleation effects upon a number of materials including copper, nickel, niobium, palladium, cobalt, silicon and germanium. There has been no evidence from these investigations to indicate that implanted carbon can induce heteroepitaxial nucleation of diamond upon any candidate material. jg p.2
Descriptors : *DIAMONDS, *EPITAXIAL GROWTH, *NUCLEATION, *ION IMPLANTATION, MATERIALS, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, CARBON, HYDROGEN, COPPER, FLUORINE, SILICON, NIOBIUM, NICKEL, GERMANIUM, PALLADIUM, COBALT.
Subject Categories : Inorganic Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE