Accession Number : ADA302964
Title : Growth, Characterization and Device Development in Monocrystalline Diamond Films.
Descriptive Note : Quarterly technical rept. 1 Oct-31 Dec 95,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Davis, R. F. ; Nemanich, R. J. ; Sitar, Z.
PDF Url : ADA302964
Report Date : DEC 1995
Pagination or Media Count : 18
Abstract : X-ray photoelectron spectroscopy (XPS) has been conducted on a TiC(111) substrate to understand bias-enhanced nucleation (BEN) of CVD diamond. The data revealed two important results: i) the C:Ti ratio of the substrate decreases after an initial exposure to the biasing procedure, and ii) the C-C bonding signal is consistent with the formation of island-like deposition of an overlayer. The decrease in the C-Ti bonding signal suggests that BEN causes C vacancies to form. This procedure also appears to enhance the surface mobility of species on the surface allowing the rapid formation of carbon islands. Nuclear transmutation of B to Li is also being investigated for donor doping of diamond. Homoepitaxial 10B enriched diamond films have been grown and characterized prior to irradiation using Hall measurements to determine resistivity, mobility and carrier concentration. The irradiation will be performed at Oak Ridge National Laboratory.
Descriptors : *FILMS, *DIAMONDS, *SINGLE CRYSTALS, *CARBIDES, *TITANIUM, *CRYSTAL GROWTH, MEASUREMENT, MOBILITY, RESISTANCE, HALL EFFECT, CHARGE CARRIERS, EPITAXIAL GROWTH, SUBSTRATES, CARBON, SURFACES, LITHIUM, X RAY PHOTOELECTRON SPECTROSCOPY, DOPING, VACANCIES(CRYSTAL DEFECTS), IRRADIATION, BORON, NUCLEAR TRANSMUTATION.
Subject Categories : Inorganic Chemistry
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE