Accession Number : ADA302997

Title :   InAsP/InGaAs Materials Development for 2.1 Micrometers Avalanche Photodiodes. Phase 2.

Descriptive Note : Quarterly rept. no. 5, Sep-Dec 94,

Corporate Author : SENSORS UNLIMITED INC PRINCETON NJ

Personal Author(s) : Olsen, Gregory H. ; Goodman, Alvin

PDF Url : ADA302997

Report Date : 01 FEB 1995

Pagination or Media Count : 22

Abstract : The overall technical objective of this program is to advance the state-of-the-art of InAsP/InGaAs materials development so that 2.1 micrometers APDs which presently do not exist and offer ten times the light detection sensitivity of anything now available can be made.

Descriptors :   *GALLIUM ARSENIDES, *PHOTODIODES, *INDIUM COMPOUNDS, *AVALANCHE DIODES, ANNEALING, HYDRIDES, DETECTION, MATERIALS, PLASMAS(PHYSICS), CRYSTAL LATTICES, LIGHT, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, SENSITIVITY, VAPOR PHASES, DISLOCATIONS, PHOSPHIDES, LEAKAGE(ELECTRICAL), SILICON NITRIDES, POLYIMIDE PLASTICS, OXYNITRIDES.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Physical Chemistry
      Polymer Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE