Accession Number : ADA303876
Title : InGaAsP Diode Laser for Nd:YAG Pumping.
Descriptive Note : Final rept. Mar 93-Dec 95,
Corporate Author : NORTHWESTERN UNIV EVANSTON IL
Personal Author(s) : Razeghi, M.
PDF Url : ADA303876
Report Date : JAN 1996
Pagination or Media Count : 235
Abstract : The main objective of this contract under ARPA/US Army #1)DAAH-04-93-G-0044 is to develop and demonstrate 0.8 micrometer high power laser based on InGaAsP material system for pumping of Nd:YAG lasers. In order to achieve this goal there are three major considerations: (1) growth and fabrication of GaInAsP/GaAs heterostructures lasers, (2) packaging and device testing, and (3) the reliability assessments of these structures. This report summarizes the results of experimental research work that the Center for Quantum Devices have accomplished under this contract. jg p6
Descriptors : *GALLIUM ARSENIDES, *INDIUM PHOSPHIDES, *PUMPING, *NEODYMIUM LASERS, *GALLIUM ARSENIDE LASERS, TEST AND EVALUATION, YTTRIUM ALUMINUM GARNET, YAG LASERS, STRUCTURES, SEMICONDUCTOR LASERS, SEMICONDUCTOR DIODES, RELIABILITY, PACKAGING, QUANTUM ELECTRONICS, DIODE LASERS.
Subject Categories : Lasers and Masers
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE