Accession Number : ADA303893
Title : Materials and Device Research for High-Speed Integrated Optoelectronic Transmitters Using Vertical-Cavity Surface-Emitting Lasers.
Descriptive Note : Final rept. 1991-19 Nov 95,
Corporate Author : TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER
Personal Author(s) : Dupuis, Russell D.
PDF Url : ADA303893
Report Date : 18 JAN 1996
Pagination or Media Count : 33
Abstract : This research was conducted in order to investigate and realize the monolithic integration of an InGaAsP/InP surface emitting LED Double Heterojunction Light Emitting Diode (DH) with an entire process of the research: design, growth, fabrication, characterization, and result analysis. The highlighted features of the system are its monolithic integration, surface emitting optical device design (LED in this case), and lateral, rather than a vertical, coupling of the LED and the HBT. The InGaAsP quaternary active layer of the LED is designed to operate at lambda = 1.55 micrometers, which coincides with the lowest dispersion wavelength of silica optical fibers. Such an integrated structure is a prototype of an LED optical transmitter, which can be widely used in telecommunication and control applications. jg
Descriptors : *HIGH VELOCITY, *TRANSMITTERS, *LASER MATERIALS, FIBER OPTICS, FREQUENCY, LASER CAVITIES, EMISSION, OPTICAL PROPERTIES, INTEGRATED SYSTEMS, DISPERSING, ELECTROOPTICS, SILICON DIOXIDE, GALLIUM ARSENIDES, HETEROJUNCTIONS, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, SURFACES, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, TELECOMMUNICATIONS, MONOLITHIC STRUCTURES(ELECTRONICS), INDIUM PHOSPHIDES, LIGHT EMITTING DIODES, BIPOLAR TRANSISTORS.
Subject Categories : Electrooptical and Optoelectronic Devices
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE