Accession Number : ADA303997

Title :   Optoelectronic Applications of Wide-Band Gap II-VI Semiconductors.

Descriptive Note : Final rept. 1 Jul 94-30 Jun 95,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s) : Schetzina, J. F.

PDF Url : ADA303997

Report Date : 24 JAN 1996

Pagination or Media Count : 17

Abstract : A continued study to demonstrate the viability of growth of LED and laser diode structures on ZnSe substrates as compared with heteroepitaxial growth of II-VI structures on GaAs substrates. Other key issues that were to be addressed included p-type doping of ZnSe using nitrogen plasma sources and the ohmic contact problem for p-type ZnSe. jg p1

Descriptors :   *SEMICONDUCTORS, *GROUP II-VI COMPOUNDS, *ZINC SELENIDES, SOURCES, ELECTROOPTICS, GROWTH(GENERAL), PLASMAS(PHYSICS), GALLIUM ARSENIDES, STRUCTURES, EPITAXIAL GROWTH, SUBSTRATES, NITROGEN, VIABILITY, DOPING, P TYPE SEMICONDUCTORS, ELECTRIC CONTACTS, DIODE LASERS.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Lasers and Masers
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE