Accession Number : ADA303997
Title : Optoelectronic Applications of Wide-Band Gap II-VI Semiconductors.
Descriptive Note : Final rept. 1 Jul 94-30 Jun 95,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH
Personal Author(s) : Schetzina, J. F.
PDF Url : ADA303997
Report Date : 24 JAN 1996
Pagination or Media Count : 17
Abstract : A continued study to demonstrate the viability of growth of LED and laser diode structures on ZnSe substrates as compared with heteroepitaxial growth of II-VI structures on GaAs substrates. Other key issues that were to be addressed included p-type doping of ZnSe using nitrogen plasma sources and the ohmic contact problem for p-type ZnSe. jg p1
Descriptors : *SEMICONDUCTORS, *GROUP II-VI COMPOUNDS, *ZINC SELENIDES, SOURCES, ELECTROOPTICS, GROWTH(GENERAL), PLASMAS(PHYSICS), GALLIUM ARSENIDES, STRUCTURES, EPITAXIAL GROWTH, SUBSTRATES, NITROGEN, VIABILITY, DOPING, P TYPE SEMICONDUCTORS, ELECTRIC CONTACTS, DIODE LASERS.
Subject Categories : Electrical and Electronic Equipment
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE