Accession Number : ADA304226

Title :   In-Situ Electron and Optical Spectroscopies of Translational and Vibrational Activated Bond Breaking and Formation on Semiconductors.

Descriptive Note : Final technical rept. 1 Jun 92-30 Nov 95,

Corporate Author : CORNELL UNIV ITHACA NY

Personal Author(s) : Ho, Wilson

PDF Url : ADA304226

Report Date : 04 DEC 1995

Pagination or Media Count : 16

Abstract : The main objective of this project is to understand the nature of adsorption, dissociation, reaction, and desorption on semiconductor surfaces when molecules are accelerated to enhance their translational energy in a supersonic beam and when the surface is irradiated by photons. These chemical processes are important for providing a scientific basis for understanding chemical vapor deposition and atomic layer epitaxy of thin films. Special emphasis was placed in understanding carbon containing molecules in order to search for suitable precursors for the growth of silicon carbide and diamond. The understanding, experience, and knowledge obtained in this study were instrumental in advancing a novel thin film growth technique based on supersonic jet epitaxy, which was successfully transferred to a small high technology company.

Descriptors :   *SPECTROSCOPY, *PHOTOCHEMICAL REACTIONS, *MOLECULAR VIBRATION, *SOLID STATE CHEMISTRY, PHOTODISSOCIATION, ADSORPTION, THIN FILMS, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, ENERGY TRANSFER, SEMICONDUCTORS, CHEMICAL BONDS, PHOTONS, BONDING, IRRADIATION, DESORPTION, SILICON CARBIDES, ATOMIC LAYER EPITAXY.

Subject Categories : Radiation and Nuclear Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE