Accession Number : ADA304269
Title : Superconductivity in Low-Temperature Grown III-V Thin Films.
Descriptive Note : Final rept. 15 Jun 92-31 May 95,
Corporate Author : CALIFORNIA UNIV BERKELEY SPONSORED PROJECTS OFFICE
Personal Author(s) : Weber, Eicke R.
PDF Url : ADA304269
Report Date : JAN 1996
Pagination or Media Count : 17
Abstract : In this AASERT project, two graduate students of the University of California, Berkeley, studied the electronic properties of various low-temperature grown III-V thin films using both optical and electrical characterization techniques. Very early on, the previously found superconductivity effect could be ascribed to inclusions of group-III elements that were not related to the low-temperature growth conditions. The results found here indicate that the anion antisite, As( sub Ga) dominates the properties of LT-GaAs. This finding will allow future improvements in LT- GaAs by designing optimized concentrations of As( sub Ga) related deep levels for specific applications. In LT-AlGaAs, the very deep arsenic antisite level leads to the formation of layers with very high resistivity. In LT-InP and possibly in LT-InAlAs the energy location of the anion antisite defects) prevents the formation of highly resistive, undoped layers. With MCDA we were able to directly prove that LT InP is highly n-type due to P( sub In) antisite defects, and to suggest which transitions form the magnetic circular dichroism spectrum for this defect. jg p1
Descriptors : *LOW TEMPERATURE, *THIN FILMS, *SUPERCONDUCTIVITY, ELECTRONICS, OPTICAL PROPERTIES, POSITION(LOCATION), MAGNETIC FIELDS, ENVIRONMENTS, LAYERS, GROWTH(GENERAL), RESISTANCE, ELECTROMAGNETIC PROPERTIES, GALLIUM ARSENIDES, ENERGY, SPECTRA, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, ALUMINUM ARSENIDES, INDIUM PHOSPHIDES, ARSENIC, ANIONS, CIRCULAR, DICHROISM.
Subject Categories : Inorganic Chemistry
Electricity and Magnetism
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE