Accession Number : ADA304516
Title : Investigation of Normal Incidence High-Performance P-type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors.
Descriptive Note : Semi-annual progress rept. no. 5, 26 Jul 95-15 Feb 96,
Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Chu, Jerome T. ; Li, Sheng S.
PDF Url : ADA304516
Report Date : 15 FEB 1996
Pagination or Media Count : 41
Abstract : The objective of this project is to perform theoretical and experimental studies of dark current, photocurrent, optical absorption, spectral responsivity, noise, and detectivity for the normal incidence strained layer p-type III-V semiconductor quantum well infrared photodetectors (QWIPs) developed under this program. The material systems under investigation include InGaAs/InAlAs on InP substrates and GaAs/InGaAs or AlGaAs/InGaAs on GaAs substrates. The project will study the usage and effects of biaxial tension and compressional strain on the material systems and their effects towards photodetector design. jg
Descriptors : *QUANTUM WELLS, *GALLIUM ARSENIDES, *ALUMINUM GALLIUM ARSENIDES, *INFRARED DETECTORS, *PHOTODETECTORS, *INDIUM, *P TYPE SEMICONDUCTORS, COMPRESSION, OPTICAL PROPERTIES, EXPERIMENTAL DATA, SUBSTRATES, SPECTRA, RADIATION ABSORPTION, TENSION, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, NOISE, INDIUM PHOSPHIDES, BIAXIAL STRESSES.
Subject Categories : Optical Detection and Detectors
Atomic and Molecular Physics and Spectroscopy
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE