Accession Number : ADA304866
Title : N-Type SiC Rectifying Junctions for High Power, High Temperature Electronics.
Descriptive Note : Final rept. 1 Jul-31 Dec 95,
Corporate Author : THREE C SEMICONDUCTOR CORP PORTLAND OR
Personal Author(s) : Parsons, James D.
PDF Url : ADA304866
Report Date : 27 FEB 1996
Pagination or Media Count : 32
Abstract : A new metal demonstrated to form ideal rectifying Schottky diode junctions to n-type SiC, and further, not to limit the thermal and power density capability of SiC devices and circuits in any way The following properties were demonstrated between kT and 1050 C: (1) metal does not spall, peel or scratch, (2) metal/n-SiC junction remains abrupt, (3) I-V unchanged by thermal exposure, (4) barrier height = 1.78 +/- 0.1 eV.
Descriptors : *SEMICONDUCTOR JUNCTIONS, *SCHOTTKY BARRIER DEVICES, THERMAL PROPERTIES, HIGH POWER, METALS, HIGH TEMPERATURE, N TYPE SEMICONDUCTORS, SILICON CARBIDES.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE